Herbert S. Bennett
Dr. Herbert S. Bennett is a NIST Fellow and Executive Advisor at the National Institute of Standards and Technology (NIST), formerly the National Bureau of Standards, Gaithersburg, MD. He received AB (magna cum laude) and Ph.D. degrees in physics from Harvard University in 1958 and 1964, respectively, and the MS degree in physics and mathematics from the University of Maryland in 1960. He served in the U.S. Navy from 1958 to 1960. From 1964 to 1966, he was a Research Associate with the Atomic Energy Research Establishment (England) and with the University of Illinois, Department of Physics and Materials Research Laboratory. He has held management and research positions at NIST and management positions at the Department of Commerce and the National Science Foundation. He was appointed a Department of Commerce Science and Technology Fellow for 1971 and 1972 and served as a Special Assistant to the Assistant Secretary for Science and Technology. He was the Director of the Division of Materials Research at the National Science Foundation from 1978 to 1980. At the request of Congressional Committees, he has appeared before them to give testimonies on materials research.
He received Maryland 's Outstanding Young Scientist Award for 1970 from the Maryland Academy of Sciences for his extensive theoretical work on ferromagnetic materials near their Curie temperatures, on analyses of temperatures and stresses induced in laser glasses, and on original calculations of electronic states and lattice vibrations in the vicinity of defects in ionic crystals. In 1997, he was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) for his pioneering work on applying solid-state theories and quantum mechanics to model the effects of high concentrations of carriers and dopants in advanced semiconductor devices. He is an IEEE Distinguished Lecturer.
In 2004, he was elected a Fellow of the American Physical Society for his insights into advanced solid-state materials and the development of unique physical models that led to improved performance of electronic, magnetic, and optical materials and that suggested new design strategies for devices based on such materials.
He was the Chairman of the 1994 NUPAD (International Conference on Numerical Modeling of Processes and Devices) and helped unify three international conferences called NUPAD, VPAD (VLSI Process and Device Modeling), and SISDEP (Simulation of Semiconductor Devices and Processes) into one international meeting called SISPAD (Simulation of Semiconductor Processes and Devices). He served as an elected member of the IEEE Electron Devices Society Administrative Committee from 1995 to 2000 and continues to serve as chairman of its Compound Semiconductor Devices and Circuits Technical Committee and to serve on its Optoelectronic Devices Technical Committee.
He has served and continues to serve on industrial and government advisory boards and committees. He has contributed to industrial consensus-based planning in computer-assisted design for the silicon industry's International Technology Roadmap for Semiconductors (ITRS) and in RF components and compound semiconductors for the National Electronics Manufacturing Initiative, Inc. (NEMI). He currently is involved with the including compound semiconductors in the ITRS and with promoting an International Technology Roadmap for Compound Semiconductors. He also serves as a member of the interagency High-End Computing Revitalization Task Force.
He has written over 120 archival technical publications on such topics as magnetic phase transitions in semiconductors and insulators, the Faraday effect, color centers in ionic crystals, and damage mechanisms in laser materials. His more recent research interests and publications include topics on semiconductor device physics, optoelectronics, and video technologies.
Recent Publications
- H. S. Bennett, "Why You Should Be Interested in Technology Roadmaps for Compound Semiconductors," Proceedings of the IEEE GaAs IC Symposium - Technical Digest(01CH37191), pp. 19 - 23 (2001).
- H. S. Bennett and James J. Filliben, "A Systematic Approach for Multidimensional, Closed-Form Analytic Modeling: Effective Intrinsic Carrier Concentrations in GaAlAs Heterostructures," J. of Res. of Natl. Inst. Stand. Technol. 107, pp. 69 - 81 (2002).
- H. S. Bennett, "A Systematic Approach for Multidimensional, Closed Form Analytic Modeling: Mobilities and Effective Intrinsic Carrier Concentrations in p type GaAlAs," Solid State Electronic 46, 1617 (2002).
- H. S. Bennett, "Multidimensional, Closed Form Analytic Expressions for Mobilities in GaAlAs Heterostructures," Journal of Applied Physics 92, 4475 (2002).
- H. S. Bennett, "What Is The Future for Technology Roadmaps on Optoelectronics Packaging," Invited Paper, Proceedings of the International Workshop on Optoelectronics Packaging and Micro-Optomechanical Systems (MOEMS), International Microelectronics and Packaging Society, pages 1 - 7 (2002).
- H. S. Bennett and H. Hung, "Dependence of Electron Density on Fermi Energy in N-type Gallium Antimonide," J. of Res. of Natl. Inst. Stand. Technol. 108, pp. 1 - 5 (2003).
