Figure RS.2.1.
Top view of fixed-fixed beam
used to measure residual
strain.
To
obtain the following
measurements, consult ASTM
standard test method E 2245
entitled
"Standard Test
Method for Residual Strain
Measurements of Thin,
Reflecting Films
Using an Optical
Interferometer" and NISTIR
7291 entitled
"MEMS Length and
Strain
Round Robin Results
with Uncertainty Analysis."
filename of 3-D data set
(optional) =
filename of 2-D data
traces (optional) =
material =
Poly1
Poly2
stacked Poly1 and Poly2
SiC-2
SiC-3
(therefore, t =
µm )
design length =
µm
which fixed-fixed beam on
the round robin test chip ?
First Second
Third
magnification =
×
orientation =
0 degree
90 degree
x-calibration
factor (for the given
magnification)
= calx
=
interferometer's maximum
field of view (for the given
magnification) =
interx
=
µm
one sigma uncertainty in a
ruler measurement (for the
given mag) =
σxcal =
µm
resolution of the
interferometer in the
x-direction
= xres =
µm
z-calibration factor
(for the given
magnification)
= calz
=
certified value of step
height standard =
cert
=
µm
certified one sigma
uncertainty of certified
value of step height
standard =
scert
=
µm
maximum range of the six
calibration measurements
taken before the data
session or after the data
session (whichever is
larger) =
zrepeat
=
µm
Is the mean value of the six
calibration measurements
used to obtain
zrepeat
greater than or less than
the mean value of all twelve
calibration measurements ?
greater
than
less than
(Therefore, ameanz =
).
drift in the calibrated data
(i.e., the absolute value of
the mean value of the six
calibration measurements
taken before the data
session minus the mean value
after the data session) =
zdrift
=
µm
percent quoted by
interferometer manufacturer
for the maximum deviation
from linearity of the data
scan over the total scan
range divided by 1 % such
that it is unitless =
zperc
=
resolution of the
interferometer in the
z-direction
=
zres
=
µm
peak-to-valley roughness of
a flat and leveled surface
of the sample material
calculated to be the average
of three or more
measurements, each
measurement of which is
taken from a different 2-D
data trace =
Rtave
=
µm
surface roughness of a flat
and leveled surface of the
sample material calculated
to be the average of three
or more measurements, each
measurement of which is
taken from a different 2-D
data trace=
Rave
=
µm
alignment ensured ?
Yes
No
data leveled ?
Yes
No
Is this fixed-fixed beam
exhibiting stiction ?
Yes
No
If it is exhibiting
stiction, do not fill out
the remainder of this form.
INPUTS
(uncalibrated values from
Trace "a" or "e"):
x1max
(i.e., x1upper)
=
µm
x1min
(i.e., x1lower)
=
µm
(x1min >
x1max)
x2min
(i.e., x2lower)
=
µm
(x2min >
x1min)
x2max
(i.e., x2upper)
=
µm
(x2max >
x2min)
INPUTS
(uncalibrated values from
Trace "b"):
x1F
=
µm z1F
=
µm (x1ave
< x1F
* calx)
x2F
=
µm z2F
=
µm (inflection
point)
( x1F
< x2F <
x3F )
x3F
=
µm z3F
=
µm (most
deflected point)
(
x1S
= x3F ;
z1S
= z3F )
x2S
=
µm z2S
=
µm (inflection
point)
x3S
=
µm z3S
=
µm ( x3S *
calx < x2ave
)
(
x1S < x2S
< x3S )
INPUTS
(uncalibrated values from
Trace "c"):
x1F
=
µm z1F
=
µm (x1ave
< x1F
* calx)
x2F
=
µm z2F
=
µm (inflection
point)
( x1F
< x2F <
x3F )
x3F
=
µm z3F
=
µm (most
deflected point)
( x1S
= x3F ;
z1S
= z3F )
x2S
=
µm z2S
=
µm (inflection
point)
x3S
=
µm z3S
=
µm ( x3S
* calx
< x2ave
)
(
x1S < x2S
< x3S )
INPUTS
(uncalibrated values from
Trace "d"):
x1F
=
µm z1F
=
µm (x1ave
< x1F
* calx)
x2F
=
µm z2F
=
µm (inflection
point)
( x1F
< x2F <
x3F )
x3F
=
µm z3F
=
µm (most
deflected point)
(
x1S
= x3F ;
z1S
= z3F )
x2S
=
µm z2S
=
µm (inflection
point)
x3S
=
µm z3S
=
µm ( x3S
* calx < x2ave
)
(
x1S < x2S
< x3S )
OUTPUTS (calibrated
values):
x1ave
=
µm
x2ave
=
µm
L
=
µm
Lmax = ( x2max
−
x1max
) * calx
Lmin = (
x2min
−
x1min
) * calx
uLL =
( Lmax
−
Lmin
) / 6 =
µm
uLxcal = (
σxcal / interx
) * ( L / calx
) =
µm
uLxres =
xres*
calx / 1.732 =
µm
ucL
=
SQRT[uLL2
+ uLxcal2
+
uLxres2]
=
µm
s
=
from Trace "c"
s = 1
(for downward bending
fixed-fixed beams)
s =
−1
(for upward bending
fixed-fixed beams)
AF =
µm from Trace "b"
w1F =
from
Trace "b"
AS
=
µm
from Trace "b"
w3S =
from Trace "b"
xeF =
µm
from Trace "b"
xeS =
µm
from Trace "b"
εr0
=
× 10-6
from Trace "b"
εr
= × 10-6
from Trace "b"
AF =
µm from Trace "c"
w1F =
from Trace "c"
AS
=
µm
from Trace "c"
w3S =
from Trace "c"
xeF =
µm
from Trace "c"
xeS =
µm
from Trace "c"
εr0 =
× 10-6 from
Trace "c"
εr
= × 10-6 from
Trace "c"
uRave = × 10-6 from
Trace "c"
unoise = × 10-6 from
Trace "c"
uW = × 10-6
from two or three traces
uxcal = × 10-6 from
Trace "c"
uL
= × 10-6
from Trace "c"
ucert = × 10-6 from
Trace "c"
urepeat = × 10-6 from
Trace "c"
udrift = × 10-6 from
Trace "c"
ulinear = × 10-6 from
Trace "c"
uzres = × 10-6 from
Trace "c"
uxres = × 10-6 from
Trace "c"
uxresL = × 10-6 from
Trace "c"
uc = SQRT[uRave2
+ unoise2
+ uW2
+ uxcal2
+
uL2
+ ucert2
+
urepeat2
+
udrift2
+
ulinear2
+
uzres2
+
uxres2
+
uxresL2]
uc
= × 10-6 from
two or three traces
AF =
µm from Trace "d"
w1F =
from
Trace "d"
AS
=
µm
from Trace "d"
w3S =
from Trace "d"
xeF =
µm
from Trace "d"
xeS =
µm
from Trace "d"
εr0
=
× 10-6
from Trace "d"
εr
= × 10-6 from
Trace "d"
Modify
the input data, given the
information supplied in any
flagged statement below, if
applicable, then
recalculate:
1.
Please fill out the entire
form.
2.
For the round robin test
chip, the thickness value is
different than what the
fabricator specified.
3.
For the round robin test
chip, the design length
should be 400, 450, 500,
550, 600, 650, 700, 750, or
800 mm.
4.
The measured value for L
is more than 3ucL
from the design length.
5.
Is the magnification
appropriate given the design
length ?
6.
Magnifications at or less
than
2.5× shall not be used.
7.
Is 0.95 < calx < 1.05
but not equal to "1"?
If not, recheck your x-calibration.
8.
The value for
interx should be between
0
µm
and 1500
µm.
9.
The value for
sxcal
should be between 0
µm
and 4
µm.
10.
The value for
xres
should be between 0
µm
and 1.57
µm.
11.
Is 0.95 < calz < 1.05
but not equal to "1"?
If not, recheck your z-calibration.
12.
The value for cert
should be greater than 0 µm
and less than 25 µm.
13.
The value for
scert
should be between 0 µm and
0.100 µm.
14.
The value for
zrepeat
should be between 0 µm and
0.070 µm.
15.
The value for
zdrift
should be between 0 µm and
0.010 µm.
16.
The value for
zperc
should be between 0 and 3.
17.
The value for zres
should be greater than 0 µm
and less than or equal to
0.005 µm.
18.
The value for
Rtave should
be between 0
µm
and 0.100
µm and greater than Rave.
19.
The value for
Rave should
be between 0
µm
and 0.020
µm.
20.
Alignment has not been
ensured.
21.
Data has not been leveled.
22.
x1min should
be greater than x1max.
23.
x2min should
be greater than x1min.
24.
x2max should
be greater than x2min.
25.
The calibrated values for
x1min and
x1max are
greater than 10 µm apart.
26.
The calibrated values for
x2min and
x2max are
greater than 10 µm apart.
27.
In Traces "b," "c," and "d,"
the value for s is
not the same.
28.
x1ave
should be < (x1F
* calx) in all
traces.
29.
(x3S *
calx) should be <
x2ave in all
traces.
30. In
all traces, make sure ( x1F
< x2F <
x3F ).
31. In
all traces, make sure ( x1S
< x2S <
x3S ).
32.
For Trace "b," | [(x2F*calx)
− xeF ] |
=
µm. This should
be < 5 µm.
If it is not, choose (x2F,
z2F)
such that (x2F
* calx) is closer to
xeF
=
µm.
33.
For Trace "b," | [(x2S*calx)
−
xeS ] | =
µm. This should
be < 5 µm.
If it is not, choose (x2S,
z2S)
such that (x2S
* calx)
is closer to xeS
=
µm.
34.
For Trace "c," | [(x2F*calx)
− xeF ] |
=
µm. This should
be < 5 µm.
If it is not, choose (x2F,
z2F)
such that (x2F
* calx) is closer to
xeF
=
µm.
35.
For Trace "c," | [(x2S*calx)
−
xeS ] | =
µm. This should
be < 5 µm.
If it is not, choose (x2S,
z2S)
such that (x2S
* calx) is closer to
xeS
=
µm.
36.
For Trace "d," | [(x2F*calx)
− xeF ] |
=
µm. This should
be < 5 µm.
If it is not, choose (x2F,
z2F)
such that (x2F
* calx)
is closer to xeF
=
µm.
37.
For Trace "d," | [(x2S*calx)
− xeS ] |
=
µm. This should
be < 5 µm.
If it is not, choose (x2S,
z2S)
such that (x2S
* calx) is closer to
xeS
=
µm.
Return to
Main MEMS Calculator Page.
NIST
is an agency of the
U.S. Commerce Department
The
Semiconductor Electronics
Division is within the
Electronics and Electrical
Engineering Laboratory.
The
MNT Project
(http://www.eeel.nist.gov/812/MNT/index.html)
is within the Enabling
Devices and ICs Group.
Date created: 12/4/2000
Last updated:
1/11/2008