Figure RS.2.1.
Top view of fixed-fixed beam
used to measure residual
strain.
To
obtain the following
measurements, consult ASTM
standard test method E 2245
entitled
"Standard Test
Method for Residual Strain
Measurements of Thin,
Reflecting Films
Using an Optical
Interferometer" and NISTIR
7291 entitled "MEMS Length
and Strain
Round Robin
Results with Uncertainty
Analysis."
date data taken (optional)
=
/
/
identifying
words
(optional) =
instrument
used
(optional) =
fabrication
facility/process
(optional) =
test
chip name/number
(optional) =
filename of 3-D data set
(optional) =
filename of 2-D data
traces (optional) =
OUTPUTS (calibrated
values):
x1ave
=
µm
x2ave
=
µm
L
=
µm
Lmax = ( x2max
−
x1max
) * calx
Lmin = (
x2min
−
x1min
) * calx
uLL =
( Lmax
−
Lmin
) / 6 =
µm
uLxcal = (
σxcal / interx
) * ( L / calx
) =
µm
uLxres =
xres*
calx / 1.732 =
µm
ucL
=
SQRT[uLL2
+ uLxcal2
+
uLxres2]
=
µm
s
=
from Trace "c"
s = 1
(for downward bending
fixed-fixed beams)
s =
−1
(for upward bending
fixed-fixed beams)
AF =
µm from Trace "b"
w1F =
from
Trace "b"
AS
=
µm
from Trace "b"
w3S =
from Trace "b"
xeF =
µm
from Trace "b"
xeS =
µm
from Trace "b"
εr0
=
× 10-6
from Trace "b"
εr
=
× 10-6
from Trace "b"
AF =
µm from Trace "c"
w1F =
from Trace "c"
AS
=
µm
from Trace "c"
w3S =
from Trace "c"
xeF =
µm
from Trace "c"
xeS =
µm
from Trace "c"
εr0 =
× 10-6 from
Trace "c"
εr
=
× 10-6 from
Trace "c"
(USE THIS VALUE)
uRave =
× 10-6 from
Trace "c"
unoise =
× 10-6 from
Trace "c"
uW =
× 10-6
from two or three traces
uxcal =
× 10-6 from
Trace "c"
uL
=
× 10-6
from Trace "c"
ucert =
× 10-6 from
Trace "c"
urepeat =
× 10-6 from
Trace "c"
udrift =
× 10-6 from
Trace "c"
ulinear =
× 10-6 from
Trace "c"
uzres =
× 10-6 from
Trace "c"
uxres =
× 10-6 from
Trace "c"
uxresL =
× 10-6 from
Trace "c"
uc = SQRT[uRave2
+ unoise2
+ uW2
+ uxcal2
+
uL2
+ ucert2
+
urepeat2
+
udrift2
+
ulinear2
+
uzres2
+
uxres2
+
uxresL2]
uc
=
× 10-6 from
two or three traces
AF =
µm from Trace "d"
w1F =
from
Trace "d"
AS
=
µm
from Trace "d"
w3S =
from Trace "d"
xeF =
µm
from Trace "d"
xeS =
µm
from Trace "d"
εr0
=
× 10-6
from Trace "d"
εr
=
× 10-6 from
Trace "d"
Report the results as follows: Since it can be assumed that the
possible estimated values are either approximately uniformly
distributed or Gaussian with approximate standard deviation
uc, the residual strain is believed to lie in the
interval er ±
uc with a level of
confidence of approximately 68 % assuming a Gaussian distribution.
Modify the
input data, given the
information supplied in any
flagged statement below, if
applicable, then
recalculate:
|
1. |
|
Please
fill out the entire form. |
|
2. |
|
The
value for t
should be between 0.000 µm
and 10.000
µm. |
|
3. |
|
The value for the design
length should be
between 0
µm
and 1000
µm. |
|
4. |
|
The
measured value for L
is more than 3ucL
from the design length. |
|
5.
|
|
Is the magnification
appropriate given the
design length ? |
|
6. |
|
Magnifications at or
less than
2.5× shall not be used. |
|
7. |
|
Is 0.95 < calx <
1.05 but not equal to
"1"? If not,
recheck your x-calibration. |
|
8. |
|
The value for
interx should be
between 0
µm
and 1500
µm. |
|
9. |
|
The value for
σxcal
should be between 0
µm
and 4
µm. |
|
10.
|
|
The value for
xres
should be between 0
µm
and 2.00
µm. |
|
11. |
|
Is 0.95
< calz < 1.05 but not
equal to "1"? If not,
recheck your z-calibration. |
|
12. |
|
The
value for cert
should be greater than 0 µm
and less than 25 µm. |
|
13.
|
|
The
value for
σcert
should be between 0 µm and
0.100 µm. |
|
14.
|
|
The
value for
zrepeat
should be between 0 µm and
0.070 µm. |
|
15. |
|
The
value for
zdrift
should be between 0 µm and
0.010 µm. |
|
16. |
|
The
value for
zperc
should be between 0 % and 3
%. |
|
17. |
|
The
value for zres
should be greater than 0 µm
and less than or equal to
0.005 µm. |
|
18. |
|
The
value for
Rtave should
be between 0
µm
and 0.100
µm and greater than Rave. |
|
19. |
|
The value for
Rave
should be between 0
µm
and 0.020
µm. |
|
20. |
|
Alignment has not been
ensured. |
|
21. |
|
Data has not been
leveled. |
|
22. |
|
x1min should
be greater than x1max. |
|
23. |
|
x2min
should be greater than x1min. |
|
24. |
|
x2max
should be greater than
x2min. |
|
25. |
|
The
calibrated values for
x1min and
x1max are
greater than 10 µm apart. |
|
26. |
|
The
calibrated values for
x2min and
x2max are
greater than 10 µm apart. |
|
27. |
|
In
Traces "b," "c," and "d,"
the value for s is
not the same. |
|
28. |
|
x1ave
should be < (x1F
* calx) in all
traces. |
|
29. |
|
(x3S
*
calx) should be <
x2ave in all
traces. |
|
30. |
|
In all
traces, make sure ( x1F
< x2F <
x3F ). |
|
31. |
|
In all
traces, make sure ( x1S
< x2S <
x3S ). |
|
32. |
|
For
Trace "b," | [(x2F*calx)
− xeF ] |
=
µm. This should
be < 5 µm.
If it is not, choose (x2F,
z2F)
such that (x2F
* calx) is closer to
xeF
=
µm. |
|
33. |
|
For Trace "b," | [(x2S*calx)
−
xeS ] |
=
µm. This
should be < 5 µm.
If it is not, choose (x2S,
z2S)
such that (x2S
* calx)
is closer to xeS
=
µm. |
|
34. |
|
For Trace "c," | [(x2F*calx)
− xeF
] | =
µm. This
should be < 5 µm.
If it is not, choose (x2F,
z2F)
such that (x2F
* calx) is closer
to
xeF
=
µm. |
|
35. |
|
For Trace "c," | [(x2S*calx)
−
xeS ] |
=
µm. This
should be < 5 µm.
If it is not, choose (x2S,
z2S)
such that (x2S
* calx) is closer
to
xeS
=
µm. |
|
36. |
|
For Trace "d," | [(x2F*calx)
− xeF
] | =
µm. This
should be < 5 µm.
If it is not, choose (x2F,
z2F)
such that (x2F
* calx)
is closer to xeF
=
µm. |
|
37. |
|
For Trace "d," |
[(x2S*calx)
− xeS
] | =
µm. This
should be < 5 µm.
If it is not, choose (x2S,
z2S)
such that (x2S
* calx) is closer
to
xeS
=
µm.
|
Return to
Main MEMS Calculator Page.
Email
questions or comments to
mems-support@nist.gov.
NIST
is an agency of the
U.S. Commerce Department
The
Semiconductor Electronics
Division is within the
Electronics and Electrical
Engineering Laboratory.
The
MNT Project
(http://www.eeel.nist.gov/812/MNT/index.html)
is within the Enabling
Devices and ICs Group.
Date created: 12/4/2000
Last updated:
6/2/2009