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 Draft
Data Analysis Sheet SH.4

Data analysis sheet for thickness measurements in a 1.5 µm commercial CMOS process.

Top view of a thickness test structure.Cross section of thickness test structure.
a)                                                                               b)
Figure SH.4.1.  For thickness test structure #1: a) a design rendition and b) a cross-section.

To obtain the measurements in this data sheet, consult the following:
[1] J. C. Marshall and P. T. Vernier, "Electro-physical Technique for Post-fabrication
Measurements of CMOS Process Layer Thicknesses," NIST Journal of Research,
Vol. 112, No. 5, 2007, p. 223-256.
[2] SEMI MS2, "Test Method for Step-Height  Measurements of Thin, Reflecting Films
Using an Optical Interferometer."







 
Preliminary INPUTS
Data Set Prelims Description
1 × magnification
2 0º              orientation
3 Yes             alignment ensured ?
4 Yes             data leveled ?
5 cert = µm
6 σcert µm
7 zrepeat = µm
8 z6 = µm
9 zdrift = µm
10 calz =
11 zperc = %
12 crystal = %
13 sigma =

                                      

                                    

 

TABLE 1a - Calibrated Step Height Measurements (in Micrometers)*,**

# Step Height uWstep ucert urepeat udrift ulinear ucW
1 step1AB
2 step1CD
3 step1EF <