date data taken (optional) = / /
identifying words (optional)  = 
instrument(s) used (optional)  = 
fabrication facility/process (optional)  = 
test chip name (optional)  = 
test chip number (optional)  = 
root filename of 3-D data sets (optional)  = 
 

                                      

                                    

 

TABLE 1 - Calibrated Step Height Measurements^*

#	Step #**	Step***	step height****	uc****	ures	ucstep*****
			(µm)	(µm)	(µm)	(µm)
1	1	step1AB
2	2	step1EF
3	3	step1GH
4	4	step2rA
5	5	step3AB(n)-
6	6	step3BC(0)

^* Supply inputs to the columns labeled "step height," "u_c," and "u_res."
^** The step number as given above in Fig. T.1.1.
^*** The corresponding step for the test structures used with Data Sheet T.2.
^**** These inputs can be obtained from Data Sheet SH.1.
^***** Where u_cstep = SQRT(u_c² + u_res²)
         (Each standard uncertainty component is obtained using a Type B analysis.)


TABLE 2 - Oxide Thickness Values From Capacitances^*,**
[with σ_ε = (aF/µm) and σ_resCa = (aF/µm²)]

#***	Thickness Designation	Ca	σCa	ures	t	uc
		(aF/µm2)	(aF/µm2)	(µm)	(µm)	(µm)
1	tfox(p1/sub)elec
2	tthin(p1/aan)elec
6	[tfox,m1(pmd/sub)+tpmd(m1/fox)]elec
7	tpmd(m1/aan)elec
10	[tfox,m2(pmd/sub)+tpmd(imd/fox)
	+timd(m2/pmd)]elec
11	[tpmd(imd/aan) +timd(m2/pmd)]elec
14	timd(m2/m1)elec

^* Supply inputs for "C_a," "σ_Ca," "σ_ε," and "σ_resCa."
^** Where t = ε_SiO2 / C_a with ε_SiO2 = 34.5 aF/µm
and u_c = (u_Ca² + u_ε² + u_res²)^1/2
with u_Ca = [ε_SiO2 / (C_a + σ_Ca) - ε_SiO2 / (C_a - σ_Ca)] / 2
and u_ε  = [(ε_SiO2 + 3σ_ε) / C_a - (ε_SiO2 - 3σ_ε) / C_a ] / (2 * 1.732) 
and u_res = σ_resCa*t / C_a
where each standard uncertainty component is obtained using a Type B analysis.
^*** The numbering in this table corresponds to the numbering for the corresponding thicknesses
in Table 2 of Data Sheet T.2.

 

TABLE 3 - Thickness Values For The Interconnects^*,**

#	Symbol	Rs	σRs	ρ	σρ	ures	t	uc
		(Ω/□)	(Ω/□)	(Ω-µm)	(Ω-µm)	(µm)	(µm)	(µm)
1	t(m2)elec

^* Supply inputs to the columns labeled "R_s," "σ_Rs," "ρ," "σ_ρ," and "u_res."
^** Where t = ρ / R_s
and u_c = (u_Rs² + u_ρ² + u_res²)^1/2
with u_Rs = [ρ  / (R_s + σ_Rs) - ρ  / (R_s - σ_Rs)] / 2
and u_ρ  = [(ρ + 3σ_ρ) / R_s - (ρ - 3σ_ρ) / R_s ] / (2 * 1.732)
where each standard uncertainty component is obtained using a Type B analysis.

 

TABLE 4 - Oxide Thickness Values^*

#	Symbol	t	uc
		(µm)	(µm)
1a	t1a = tfox(pmd/sub)
1b	t1b = tfox(pmd/sub)
1c	t1c = tfox(pmd/sub)
1d	t1d = tfox(pmd/sub)
1	t1
2	t2 = tpmd(imd/fox)
3	t3 = timd(gl/pmd)
4	t4 = t(gl)
	tSiO2

^* Where t_1a = step1_EF + t_1plus
and t_1plus = t_{fox(p1/sub)elec} - step1_AB - [step1_AB / (t_{fox(p1/sub)elec}- t_{thin(p1/aan)elec})]t_{thin(p1/aan)elec}
and t_1b = -step1_GH + t_1plus
and t_1c = [t_{fox,m1(pmd/sub)}+t_pmd(m1/fox)]_elec - t_{pmd(m1/aan)elec}
and t_1d = [t_{fox,m2(pmd/sub)}+t_pmd(imd/fox)+t_imd(m2/pmd)]_elec- [t_pmd(imd/aan) +t_imd(m2/pmd)]_elec
and t₁ = the thickness (i.e., t_1a , t_1b , t_1c , or t_1d ) with the smallest value for u_c
and t₂ = [t_pmd(imd/aan) + t_imd(m2/pmd)]_elec - t_{imd(m2/m1)elec}
and t₃ = t_(m2)elec + step3_BC(0) - step2_rA + t_{imd(m2/m1)elec}
and t₄ = step3_AB(n)^-
and t_SiO2 = t₁ + t₂ + t₃ + t₄
 

Report the results as follows:  Since it can be assumed that the possible estimated values are either
approximately uniformly distributed or Gaussian with approximate standard deviation u_c, the oxide
thickness is believed to lie in the interval t_SiO2 ± u_c with a level of confidence of approximately 68 %
assuming a Gaussian distribution. 

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Modify the input data, given the information supplied in any flagged statement below, if applicable, then recalculate:
1.		Please fill out the entire form.
2.		The values for the step heights in Table 1 should be between -2.500 µm and 2.500 µm.
3.		The uc input values in Table 1 should be between 0.0000 µm and 0.0300 µm.
4.		The values for ures in Table 1 should be between 0.0000 µm and 0.0500 µm, inclusive.
5.		The value of σε  for Table 2 should be between 0.0 aF/µm and 0.3 aF/µm, inclusive.
6.		The value of σresCa for Table 2 should be between 0 aF/µm2and 3.0 aF/µm2, inclusive.
7.		The values for Ca in Table 2 should be between 1.0 aF/µm2 and 1300.0 aF/µm2.
8.		The values for σCa in Table 2 should be between 0.00 aF/µm2 and 10.00 aF/µm2.
9.		The value of Rs in Table 3 should be between 0.0100 Ω/□ and 0.0700 Ω/ □.
10.		The value of σRs in Table 3 should be between 0.0001 Ω/□ and 0.0050 Ω/□.
11.		The value of ρ in Table 3 should be between 0.020 Ω-µm and 0.040 Ω-µm.
12.		The value of σρ in Table 3 should be between 0.000 Ω-µm and 0.005 Ω-µm, inclusive.
13.		The value of ures in Table 3 should be between 0 µm and 0.0500 µm, inclusive.
14.		All of the thicknesses in Table 4 should be between 0.00 µm and 4.00 µm.
15.		All of the values for uc in Table 4 should be between 0.00 µm and 0.30 µm.

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Email questions or comments to mems-support@nist.gov.

NIST is an agency of the U.S. Commerce Department's Technology Administration.
The Semiconductor Electronics Division is within the Electronics and Electrical Engineering Laboratory.
The MNT Project (http://www.eeel.nist.gov/812/MNT/index.html) is within the Enabling Devices Group.

Date created: 1/12/2009
Last updated: 1/8/2010