Data
analysis sheet for thickness
measurements in a commercial CMOS
process.
a)
b) Figure T.2.1.For thickness test structure
#1: a) a design rendition and b) a
cross-section.
To obtain the
measurements in this data sheet,
consult the following: [1] J. C.
Marshall and P. T. Vernier,
"Electro-physical Technique for
Post-fabrication Measurements of
CMOS Process Layer Thicknesses,"
NIST Journal of Research,
Vol. 112, No. 5, 2007, p.
223-256.
[2] SEMI MS2, "Test Method for
Step Height Measurements of
Thin Films."
date data
taken (optional) =
/
/
fabrication
Preliminary
INPUTS
Data Set Prelims
Description
1
×
magnification
2
orient =
orientation of the test
structure on the test
chip
3
align =
alignment ensured ?
4
level =
data leveled ?
5
cert =
µm
6
σcert
=
µm
7
zrepeat
=
µm
at the same location on
the physical step height (whichever
is larger)
8
z6
=
µm
9
zdrift
=
µm
10
calz =
at the same location on
the physical step height
11
zperc
=
%
if
applicable, over the
instrument's total scan
range, the maximum
percent deviation from linearity,
as quoted by the instrument
manufacturer (typically
less than 3%)
12
crystal =
%
13
sigma
=
TABLE
1a -
Calibrated
Step
Height Measurements
(in
Micrometers)*,**
#
Step
Height
uWstep
ucert
urepeat
udrift
ulinear
ucW
1
step1AB
2
step1CD
3
step1EF
4
step1GH
5
step1rA
6
step1rD
7
step1rE
8
step2rA
9
step2AB
10
step2BC
11
step2CD
12
step2BD
13
step3AB(0)
14
step3AB(n)-
15
step3BC(0)
16
step3CD(0)
*
Supply inputs to the columns
labeled "Height" and "uWstep." **
Where ucert =
|stepNXY|
*
σcert /
cert and urepeat
=
|stepNXY|
* zrepeat /
(2 * 1.732 *
z6)
and udrift =
|stepNXY|
* (zdrift * calz)
/
(2 * 1.732 * cert)
and ulinear =
|stepNXY|
* zperc /
(1.732)
and ucW
= (uWstep2
+ ucert2
+ urepeat2
+ udrift2
+ ulinear2)1/2
TABLE
1b -
Calibrated
Step
Height Measurements from
Table 1a
(in
Micrometers)
with
Additional Uncertainty
Components*,**,***
[where
σrough
=
µm****]
#
Step
Height
σplatNX
σplatNY
ubasic
uWstep
uLstep
ures*****
uc
1
step1AB
2
step1CD
3
step1EF
4
step1GH
5
step1rA
6
step1rD
7
step1rE
8
step2rA
9
step2AB
10
step2BC
11
step2CD
12
step2BD
13
step3AB(0)
14
step3AB(n)-
15
step3BC(0)
16
step3CD(0)
*
Supply inputs for "σplatNX,"
"σplatNY,"
"ures,"
and "σrough." ** The values for
"Height" and "uWstep"
are taken directly from
Table 1a when the "Calculate
and Verify" button is
pushed. *** Where ubasic
= (ucert2
+ urepeat2
+ udrift2
+ ulinear2)1/2
and uLstep
= [(σplatNX
-
σrough)2
+ (σplatNY
-
σrough)2]1/2
and uc
= (ubasic2
+ uWstep2
+ uLstep2
+ ures2)1/2
****Where
σrough
is the smallest of all the
values for
σplatNX
and
σplatNY
*****
Non-zero data can be added
to the column labeled "ures"
to obtain
En
values less than or equal to
1.0 in Tables 5 and 6.
TABLE
2 -
Oxide Thickness Values From
Capacitances*,**
[with
σε
=
(aF/µm)***
and
σresCa
=
(aF/µm2)***]
#
Thickness Designation
Ca
σCa***
ures
t
uc
(aF/µm2)
(aF/µm2)
(µm)
(µm)
(µm)
1
tfox(p1/sub)elec
2
tthin(p1/aan)elec
3
tfox(p2/sub)elec
4
tthin(p2/aan)elec
5
tthin(p2/p1)elec
6
[tfox,m1(pmd/sub)+tpmd(m1/fox)]elec
7
tpmd(m1/aan)elec
8
tpmd(m1/p1)elec
9
tpmd(m1/p2)elec
10
[tfox,m2(pmd/sub)+tpmd(imd/fox)
+timd(m2/pmd)]elec
11
[tpmd(imd/aan)
+timd(m2/pmd)]elec
12
[tpmd(imd/p1)
+timd(m2/pmd)]elec
13
[tpmd(imd/p2)
+timd(m2/pmd)]elec
14
timd(m2/m1)elec
*
Supply inputs for "Ca,"
"σCa,"
"σε,"
and "σresCa."
** Where
t = εSiO2/ Ca with
εSiO2
= 34.5 aF/µm
and uc
= (uCa2
+ uε2
+ ures2)1/2 with uCa =
[εSiO2/ (Ca +
σCa)
-
εSiO2/ (Ca
-
σCa)] / 2
and uε= [(εSiO2+
3σε)
/ Ca
-
(εSiO2
-
3σε)
/ Ca
] / (2 * 1.732)
and ures
= σresCa*t
/ Ca ***
Non-zero data can be added
to "σresCa"
to obtain
En
values less than or equal to 1.0
in Tables 5 and 6.
Alternatively or in addition,
the value(s) for σε
and/or σCa
can be modified.
TABLE
3 -
Thickness Values For The
Interconnects*,**
#
Symbol
Rs
σRs***
ρ
σρ***
ures***
t
uc
(Ω/□)
(Ω/□)
(Ω-µm)
(Ω-µm)
(µm)
(µm)
(µm)
1
t(p1)elec
2
t(p2)elec
3
t(m1)elec
4
t(m2)elec
* Supply inputs to
the columns labeled
"Rs,"
"σRs,"
"ρ,"
"σρ,"
and "ures." ** Where t
=
ρ
/ Rs
and
uc = (uRs2
+ uρ2
+ ures2)1/2
with uRs
= [ρ/ (Rs
+σRs)
-
ρ/ (Rs
-σRs)] / 2
and
uρ= [(ρ +
3σρ)
/ Rs
-
(ρ
-
3σρ)
/ Rs
] / (2 * 1.732)
***
Non-zero data can be added to
the column labeled "ures"
to obtain En
values less than or equal
to 1.0 in Tables 5 and 6.
Alternatively or in addition,
the values for σRs
and/or σρ
can be modified.
TABLE
4 -
Crystal Lattice Percentages
#
Approach
%tab
(%)
%tbe (%)
1
Electrical*
2
Physical**
* A
prediction for the ideal
case **
As calculated from step1AB
in Table 1a and tfox(p1/sub)elec
and
tthin(p1/aan)elec
in Table 2
TABLE 5 -
Calculated Thickness Values
for the Given Thicknesses*,**
#
Thickness
Designation
tphys (µm)
uc,phys (µm)
telec
(µm)
uc,elec
(µm)
En***
En
< 1.0 ?
1
tfox(p1/sub)
2
tthin(p1/aan)
3
t(p1)
4
t(p1')
5
tfox(p2/sub)
6
tthin(p2/aan)
7
tthin(p2/p1)
8
t(p2)
9****
tfox,m1(pmd/sub)
10
tpmd(m1/fox)
11
tpmd(m1/aan)
12
tpmd(m1/p1)
13
tpmd(m1/p2)
14
tpmd(imd/fox)
15
tpmd(imd/aan)
16
tpmd(imd/p1)
17
tpmd(imd/p2)
18
tfox,m1(pmd/sub)+tpmd(m1/fox)
19
t(m1)
20****
tfox,m2(pmd/sub)
21
tpmd(imd/aan)+timd(m2/pmd)
22
tpmd(imd/p1)+timd(m2/pmd)
23
tpmd(imd/p2)+timd(m2/pmd)
24
timd(m2/pmd)
25
timd(m2/m1)
26
tfox,m2(pmd/sub)+tpmd(imd/fox)
+timd(m2/pmd)
27
t(m2)
28
timd(gl/pmd)
29
timd(gl/m1)
30
t(gl)
31
t(ni)
*
For use in calculations, choose
the thickness (either physical
or electrical) with the lower
value of uc. ** This analysis
assumes that [tpmd(imd/aan)+timd(m2/pmd)]phys=[tpmd(imd/aan)+timd(m2/pmd)]elec
and tpmd(m1/p1)phys=tpmd(m1/p1)elec. *** Where
En=
|tphys
- telec|
/
[sigma
* (uc,phys2
+ uc,elec2)1/2]
if sigma
¹
10
and En
= |tphys
-
telec|
/ (3uc,phys+3uc,elec)
if sigma = 10.
For the above data,
sigma =
.
If sigma = 2
(recommended), then 95 % of the
data in Tables 5 and 6 should
have
En
values less than or
equal to 1.0. **** If
tfox(pmd/sub)
=
tfox,m1(pmd/sub)
= tfox,m2(pmd/sub),
then for the sample data tphys
for #9 is the thickness to
use in calculations due to it
having the lower value of uc.
TABLE
6 -
Calculated Thickness Values
For The Virtual Oxides*
#
Thickness
Designation
tphys (µm)
uc,phys (µm)
telec
(µm)
uc,elec
(µm)
En**
En
< 1.0 ?
1
tthin,be(p1/aan)
2
tthin,ab(p1/aan)
3
tthin,be(p2/aan)
4
tthin,ab(p2/aan)
5
tthin,be(p2/p1)
6
tthin,ab(p2/p1)
7
tfox,be(p1/sub)
8
tfox,ab(p1/sub)
9
tfox,ab(p2/sub)
10
tfox,ab,m1(pmd/sub)
11
tfox,ab,m2(pmd/sub)
* For use in
calculations, choose the
thickness (either physical or
electrical) with the lower value
of uc. ** Where
En=
|tphys
- telec|
/
[sigma
* (uc,phys2
+ uc,elec2)1/2]
if sigma
¹
10 and
En
=
|tphys
-
telec|
/
(3uc,phys+3uc,elec)if sigma = 10.
For the above data,
sigma =
.
If sigma = 2
(recommended), then 95 % of the
data in Tables 5 and 6 should
have
En
values less than or
equal to 1.0.
Results for number of
En values less
than or equal to 1.0 in Tables 5
and 6 with
sigma = :
number of "yeses" =
percent
"yeses"=
%
number of "nos" =
percent "nos"=
%
total
number of "yeses" and "nos" =
total =
%
Report the results as follows: Since it can be assumed that the
possible estimated values are either approximately uniformly
distributed or Gaussian with approximate standard deviation
uc, the
thicknessis believed to lie in the
interval t ±
uc with a level of
confidence of approximately 68 % assuming a Gaussian distribution.
Modify the input data,
given the information
supplied in any flagged
statement below, if
applicable, then
recalculate:
1.
2.
3.
4.
5.
6.
7.
8.
calz
and (cert
+ 0.100 µm)/calz.
9.
10.
11.
12.
13.
14.
15.
16.
σrough
for Table 1b should be between
0.0000 µm and the smallest value
for
σplatNX
and
σplatNY,
inclusive.
17.
18.
19.
ε
for Table 2 should be
between 0.0 aF/µm
and 0.3 aF/µm,
inclusive.
20.
σresCa
for Table 2 should be
between 0 aF/µm2and
3.0 aF/µm2,
inclusive.
21.
22.
23.
Ω/□
and 35.0
Ω/□
for t(p1)elec
and t(p2)elec
and between
0.0100
Ω/□
and 0.0700
Ω/□
for t(m1)elec
and t(m2)elec.
24.
25.
ρ
in Table 3
should be between 5.0
Ω-µm and 10.0
Ω-µm
for t(p1)elec
and t(p2)elec
and between
0.020
Ω-µm and 0.040
Ω-µm
for t(m1)elec
and t(m2)elec.
26.
27.
28.
29.
30.
31.
There are
thicknesses with En
values greater than 1.0
in Tables 5 and/or 6
with
sigma
=
.
Is this ok?