Jeong-o Jeong
University:
Gradation Date: May 2009
Hometown:
My Project: Development of software tools for extracting model parameters of SiC power diodes
The emergence of High-Voltage, High-Frequency Silicon-Carbide power devices is expected to revolutionize industrial and military power generation, transmission, and distribution systems. Progress has been made in developing 10 kV SiC Junction Barrier Schottky (JBS), PiN, and Merge PiN Schottky (
The goal of the SURF project is to develop and demonstrate a new software package called DIode Model Parameter extrACtion Tools (DIMACT) that is necessary to extract parameters for both Si and SiC power diode models. The software package is developed using LabWindows/CVI and consists of three programs: 1) JBS MeaSuRement (JBSMSR) program, 2)
The model parameters extracted from the new DIMPACT tools are incorporated into diode models for simulation in the Saber circuit simulator. The simulated results obtained using these models are compared with measured data to validate the extracted parameters. The results demonstrate that the model parameters extracted from the JBSMSR program are accurate for both low voltage (e.g. 45 V) Si JBS diodes and high voltage (e.g. 10 kV) SiC JBS diodes. These models are being used as part of a 100 A, 10 kV half-bridge SiC MOSFET/JBS power module model that will be used to perform the simulations necessary to design the SSPS in
